CurvoStudio

Current model·Semiconductor junctions

P–N junction diode

See how the depletion region enables forward current, blocks reverse current and changes during breakdown.
Power off · Ready0.0 s / 15 s
Power off
↖ Drag to rotate
P-type regionN-type regionDepletion regionCathode band
Operating regionPower off
Junction voltage0 V
Diode current0 mA
Junction temperature25 °C

Junction bias experiment

Diode I–V characteristics

Inspect the exponential forward curve and the reverse breakdown region independently.

Live operating pointApply power to generate the curves
Forward characteristicExponential current rise under forward bias
00 µA0.352.5 mA0.5105 mA0.8157.5 mA1210 mAApply power to generate the curves
Reverse characteristicLeakage and avalanche breakdown under reverse bias
-115-210 mA-86.2-157.5 mA-57.5-105 mA-28.8-52.5 mA00 µAApply power to generate the curves